发明名称 SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR
摘要 A fabrication method includes forming a spin-polarizing layer, a spin transport layer on the spin polarizing layer on a substrate, a free layer magnet on the spin transport layer, a non-magnetic layer on the spin polarizing layer, a reference layer on the non-magnetic layer, and a hard mask layer on the reference layer, etching the hard mask layer and forming a read portion including the reference layer, the nonmagnetic layer and the free layer magnet, forming a nonlinear resistor layer on surfaces of the spin transport layer, the spacers, and the hard mask layer, etching the nonlinear resistor layer, the spin transport layer, and the spin polarizing layer and forming a write portion including the spin transport layer and the spin polarizing layer, forming an interlevel dielectric layer, forming a trench, exposing an upper surface of the reference layer of the read and write portions.
申请公布号 US2012288964(A1) 申请公布日期 2012.11.15
申请号 US201213552033 申请日期 2012.07.18
申请人 GAIDIS MICHAEL C.;NOWAK JANUSZ J.;SUN JONATHAN Z.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GAIDIS MICHAEL C.;NOWAK JANUSZ J.;SUN JONATHAN Z.
分类号 H01L21/8246 主分类号 H01L21/8246
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