发明名称 |
Al-BASED ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an Al-based alloy sputtering target capable of increasing a deposition rate (sputter rate) when a sputtering target is used, and preferably capable of preventing the occurrence of splashes. <P>SOLUTION: The Al-based alloy sputtering target includes Ta. In the Al-based alloy sputtering target, an Al-Ta-based intermetallic compound including Al and Ta preferably has a mean particle diameter of 0.005 μm or more and 1.0 μm or less, and a mean inter-particle distance of 0.01 μm or more and 10.0 μm or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012224942(A) |
申请公布日期 |
2012.11.15 |
申请号 |
JP20110221005 |
申请日期 |
2011.10.05 |
申请人 |
KOBE STEEL LTD;KOBELCO KAKEN:KK |
发明人 |
MATSUMOTO KATSUSHI;TAKAGI KATSUHISA;TAKETOMI YUICHI;NAKAI JUNICHI;MAKINO HIDETADA;TAKAGI TOSHIAKI |
分类号 |
C23C14/34;B21B3/00;B22D23/00;B22F3/15;C22C1/02;C22C21/00 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|