发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus capable of enhancing uniformity of plasma density distribution in a longitudinal direction of an antenna. <P>SOLUTION: A plasma processing apparatus has an antenna 30 in which a high-frequency current I<SB POS="POST">R</SB>is flowed from one end part to the other end part in an X direction. Unevenness in a vertical direction is provided to a lower surface 33 of the antenna 30, and more convex parts 35 are arranged in the vicinity of both end parts rather than the center part in the X direction in the antenna 30. A comb-like shield conductor 60 for shielding an electric field between the antenna 30 and a plasma 50 is provided downward the antenna 30. The shield conductor 60 has in the X direction a plurality of linear conductors 62 parallel to a Y direction, and an electrically-grounded connection conductor electrically connecting one end parts in the Y direction of the plurality of linear conductors 62 in parallel. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012226888(A) 申请公布日期 2012.11.15
申请号 JP20110091733 申请日期 2011.04.18
申请人 NISSIN ELECTRIC CO LTD 发明人 ANDO YASUNORI;MATSUBARA KATSUO;TSUNODA TAKANORI;TSUJI KURAYUKI
分类号 H05H1/46;C23C16/509;H01L21/205;H01L21/3065 主分类号 H05H1/46
代理机构 代理人
主权项
地址