RESISTANCE-CHANGING ELEMENT, SEMICONDUCTOR DEVICE INCLUDING SAME, AND PROCESSES FOR PRODUCING THESE

摘要

A resistance-changing element which comprise a first electrode, a second electrode, and an ion-conducting layer disposed between the first electrode and the second electrode and which changes in resistance when metal ions supplied from the first electrode to the ion-conducting layer receive electrons from the second electrode to separate out as the metal and this metal forms a bridge to connect the first electrode and the second electrode, wherein the ion-conducting layer has a multilayer structure composed of a first ion-conducting layer, which is constituted of a compound containing oxygen and carbon, and a second ion-conducting layer, which is constituted of metal oxides, the metal oxides that constitute the second ion-conducting layer including at least either zirconium oxide or hafnium oxide.