发明名称 Semiconductor Device and Method of Making Same
摘要 Embodiments relate to a semiconductor device, including a channel area; a gate line extending along the channel area so that the channel area can be set into a conductive state by activating the gate line; a plurality of terminals including an electrical connection to the channel area, so that the plurality of terminals is connectable to a predetermined voltage by activating the gate line.
申请公布号 US2012286334(A1) 申请公布日期 2012.11.15
申请号 US201213558287 申请日期 2012.07.25
申请人 SOMMER MICHAEL;INFINEON TECHNOLOGIES AG 发明人 SOMMER MICHAEL
分类号 H01L27/10 主分类号 H01L27/10
代理机构 代理人
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