发明名称 FLASH MEMORY DEVICE AND ASSOCIATED CHARGE PUMP CIRCUIT
摘要 A charge pump circuit comprises a first booster set, a second booster group, and a detecting circuit. The first booster set receives a supply voltage and generates a first output voltage. The detecting circuit generates a detecting signal depending on the voltage level of the first output voltage. The second booster group receives the supply voltage and generates the first output voltage or a second output voltage according to the detecting signal. The second booster group is composed of a plurality of booster sets connected in parallel, wherein each booster set comprises a plurality of charge pump stages and a plurality of switch units. The number of serially-connected charge pump stages of each booster set in the second booster group is controlled by the plurality of switch units according to the stable voltage levels of the first and second output voltages.
申请公布号 US2012287717(A1) 申请公布日期 2012.11.15
申请号 US201113105467 申请日期 2011.05.11
申请人 KUO CHUNG SHAN;ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. 发明人 KUO CHUNG SHAN
分类号 G11C11/21;G05F3/02 主分类号 G11C11/21
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