发明名称 |
GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIAL CHARGE |
摘要 |
<p>The present invention relates to a method of growing a silicon ingot comprising a dopant material having a segregation coefficient of k, wherein the concentration of the dopant is axially substantially uniform throughout the ingot. The method comprises the steps of providing a crucible having an inner growth zone in fluid communication with an outer feed zone, and the inner growth zone and the outer feed zone have cross-sectional areas that are can be used to determine conditions for maintaining dopant uniformity for the specific dopant material used. A crystalline growth system for growing at least one uniformly doped silicon ingot is also disclosed.</p> |
申请公布号 |
WO2012154551(A2) |
申请公布日期 |
2012.11.15 |
申请号 |
WO2012US36497 |
申请日期 |
2012.05.04 |
申请人 |
GT ADVANCED CZ, LLC;JOHNSON, BAYARD, K. |
发明人 |
JOHNSON, BAYARD, K. |
分类号 |
C30B15/04;C30B29/06;H01L21/02 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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