| 摘要 |
<p>A near-infrared shield according to the present invention includes a base and a near-infrared absorption layer disposed on one main surface of the base. When the near-infrared shield is irradiated from the near-infrared absorption layer side with xenon light having a wavelength of 380 nm to 1200 nm at an illuminance of 60 W/m2 (an energy density in a range of 300 nm to 400 nm) for 16 hours under a condition of BPT of 63° C. and a relative humidity of 50%, chromaticity changes Deltax, Deltay of transmitted light, which are shown in a chromaticity diagram of a CIE1931XYZ color system, are 0.005 or less respectively. The near-infrared shield has an excellent near-infrared shielding property and an excellent light resistance, and its near-infrared absorptivity does not deteriorate even after long-term storage.</p> |
