ANALYSIS CIRCUIT FOR FIELD EFFECT TRANSISTORS HAVING A DISPLACEABLE GATE STRUCTURE

摘要

The invention relates to an analysis circuit (1) for a field effect transistor (11) having a displaceable gate structure, having a measurement circuit (12) coupled between a supply voltage connection (VDD) of the analysis circuit (1) and a drain connection of the field effect transistor (11) and designed to output a measurement signal that is dependent on the current strength of a current flowing through the field effect transistor (11) to a measurement connection (1out).