| 摘要 |
<p>According to the invention there is provided a method of plasma etching a silicon carbide workpiece including the steps of:
forming a mask on a surface of the silicon carbide workpiece;
performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%; and
subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.</p> |
