PHOTOELECTRIC TRANSDUCER

摘要

A photoelectric conversion element (1) of the present invention includes: a photoelectric conversion layer (2); and a photonic crystal provided inside the photoelectric conversion layer (2) to provide a photonic band gap, the photonic crystal being designed such that nanorods (30) whose refraction index is smaller than that of a medium of the photoelectric conversion layer (2) are provided periodically inside the photoelectric conversion layer (2), and there are provided defects (31) to provide a defect level in the photonic band gap, when a wavelength of a resonance peak corresponding to the defect level is », the nanorods (30) are provided two-dimensionally with a pitch of not less than »/7 and not more than »/2, and a coefficient º v indicative of strength of coupling between the photonic crystal and the outside is substantially equal to a coefficient a of absorption of light by the photoelectric conversion layer (2).