| 摘要 |
A semiconductor device includes a semiconductor layer, a first diffused region formed in the semiconductor layer, a second diffused region formed in the first diffused region, a trench formed in the semiconductor layer, a gate electrode disposed in the trench, a top surface of the gate electrode being lower than a top surface of the semiconductor layer and sagging downwards in a center thereof, a non-doped silicate glass film disposed in the trench and formed over the gate electrode, a top surface of the silicate glass film sagging downwards in a center thereof, an oxide film disposed in the trench and formed over the non-doped silicate glass film, a top surface of the oxide film sagging downwards in a center, and a source electrode formed over the semiconductor layer so that the source electrode contacts the first and second diffusion regions, and the oxide film at the top surface thereof. |
