发明名称 |
III-nitride crystal substrate and III-nitride semiconductor device |
摘要 |
Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the <0001> directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser. |
申请公布号 |
US8310030(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US201113178479 |
申请日期 |
2011.07.07 |
申请人 |
HIROTA RYU;UEMATSU KOJI;KAWASE TOMOHIRO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIROTA RYU;UEMATSU KOJI;KAWASE TOMOHIRO |
分类号 |
H01L29/02;H01L21/20;H01L33/32 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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