METHOD FOR FORMING ELECTRODES ON SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming electrodes on a silicon carbide semiconductor device capable of suppressing peeling by improving adhesion of a metal/silicon carbide device interface of a manufactured device in the silicon carbide semiconductor device.

SOLUTION: A method for forming electrodes on a silicon carbide substrate includes a step of depositing a metal on which a carbide can be formed on a silicon carbide substrate on which a graphite is formed on its surface and a step of forming the carbide between a metal layer and the silicon carbide substrate by annealing the silicon carbide substrate.

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