| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable removal of cracks in a visual inspection though cracks developed on a semiconductor substrate in a scribe region extend to an element formation region when a WLP is singulated by dicing of the wafer; to prevent the cracks from extending to the element formation region; and to eliminate defect due to detachment of a resin layer in a scribe region, which serves as a protection film for covering the element formation region. <P>SOLUTION: Edges of a first resin layer 6 and a second resin layer 22 coating a passivation film 5 are positioned inside a seal ring 17 provided on an outer periphery of an element formation region 18a. Because of this, even in the case where cracks 20 of a semiconductor substrate 1 developed in a scribe region 18b at the time of dicing extend to the element formation region 18a, the cracks can be discriminated by a visual inspection. Or, a crack stopping trench 24 is formed on the semiconductor substrate 1 in the scribe region 18b between a TEG region 15 and the element formation region 18a of the scribe region 18b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
