PHOTORESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER, AND COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a photoresist composition having sufficient basic characteristics such as sensitivity and excellent lithographic performances represented by an MEEF (mask error enhancement factor) and LWR (line width roughness) as an indicator, to provide a method for forming a resist pattern using the photoresist composition, and to provide a polymer and a compound to be used for the resist composition.

SOLUTION: The photoresist composition includes a polymer having a structural unit expressed by formula (1) and a radiation-sensitive acid generator. In the formula, preferably X is an alkane diyl group having 2 to 4 carbon atoms and Z represents a group that forms a divalent monocyclic alicyclic group having 5 to 8 carbon atoms together with a carbon atom bonded to X.

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