| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which two silicon substrates are bonded in an overlapping manner to electrically connect bump electrodes formed on the two silicon substrates, respectively, which prevents degradation of bump protection performance by using a resin and prevents degradation of connectivity between the bump electrodes. <P>SOLUTION: After a bump electrode 230, a dummy bump 240 and a heat resistant resin film 300 with top faces having uniform heights are formed on each of a first silicon substrate 100 and a second silicon substrate 101, the first silicon substrate 100 and the second silicon substrate 101 are bonded so that the bump electrodes formed on the respective substrates are electrically connected. At this time, by arranging the dummy bump 240 in such a manner as to be bonded with the heat resistant resin film 300 on the counter silicon substrate, a semiconductor device having both excellent electrical connection between the bump electrodes and bump protection performance by a resin film of high heat resistance without voids can be achieved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
