ZnO-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a Schottky-barrier type ZnO-based semiconductor device having a further reduced leakage current and improved electrical characteristics.

SOLUTION: An n-type ZnO-based semiconductor layer 2 and an aluminum oxide film 3 are sequentially formed on a substrate 1. A metal electrode 4 and a pad electrode 5 are formed on and above the aluminum oxide film 3. The metal electrode 4 has a multi-layer film structure in which an Au layer 4b is stacked on a Pd layer 4a. The metal electrode 4 functions as a translucent electrode. The pad electrode 5 is formed on the metal electrode 4. A rear-surface electrode 6 is formed on the rear surface of the substrate 1 so as to face the metal electrode 4. The n-type ZnO-based semiconductor layer 2 and the Pd layer 4a constitute a Schottky-barrier structure.

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