发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON SINTERED BODY
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a polycrystalline silicon sintered body having a low residual oxygen concentration. <P>SOLUTION: The method for producing a polycrystalline silicon sintered body includes, e.g., a first step of obtaining a molded body by molding a silicon powder and a second step of putting the molded body in a heating device. The first and the second steps are carried out in a non-oxidizing gas atmosphere. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012214314(A) 申请公布日期 2012.11.08
申请号 JP20110079830 申请日期 2011.03.31
申请人 TOHO ZINC CO LTD 发明人 OTSUKI ETSUO;ANDO AYAKO
分类号 C01B33/02;H01L31/04 主分类号 C01B33/02
代理机构 代理人
主权项
地址