发明名称 |
Method of Increasing the Germanium Concentration in a Silicon-Germanium Layer and Semiconductor Device Comprising Same |
摘要 |
Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming layer of silicon germanium on a P-active region of a semiconducting substrate wherein the layer of silicon germanium has a first concentration of germanium, and performing an oxidation process on the layer of silicon germanium to increase a concentration of germanium in at least a portion of the layer of silicon germanium to a second concentration that is greater than the first concentration of germanium.
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申请公布号 |
US2012280289(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201113101659 |
申请日期 |
2011.05.05 |
申请人 |
FLACHOWSKY STEFAN;SCHEIPER THILO;JAVORKA PETER;HOENTSCHEL JAN;GLOBALFOUNDRIES INC. |
发明人 |
FLACHOWSKY STEFAN;SCHEIPER THILO;JAVORKA PETER;HOENTSCHEL JAN |
分类号 |
H01L29/772;H01L21/20 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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