| 摘要 |
A method for manufacturing a bipolar punch-through semiconductor device is provided, wherein the following steps are performed (a)providing a first high-doped wafer (10) having a first and a second side (11, 2), which is doped at least on the first side (11) with first particles of the first conductivity type, (b)providing a second low-doped wafer (20) of the first conductivity type having a third and a fourth side, (c)creating a wafer laminate having a wafer laminate thickness by bonding the first wafer (10) on its first side (11) and the second wafer (20) on its fourth side (22) together, (d)performing afterwards a diffusion step,thereby creating a diffused inter- space layer (31), which comprises first sided parts of the first wafer (10) and fourth sided parts of the second wafer (20), wherein that part of the second wafer having unamended doping concentration in the finalized device forms a drift layer (2), (e)afterwards creating at least one layer of the second conductivity type on the third side (21), (f)afterwards reducing the wafer laminate thickness from the second side (12) within the inter-space layer (31) and within the second wafer (20) such that a buffer layer(3) is created, which comprises the remaining part of the wafer laminate on the fourth side (22) having higher doping concentration than the drift layer (2). |
