发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To achieve improvement of manufacturing efficiency, cost reduction, and improvement of reliability. <P>SOLUTION: A first field-effect transistor of a first conductivity type is provided on a first substrate. A second field-effect transistor of a second conductivity type different from the first conductivity type is provided on a second substrate. Subsequently, the first substrate and the second substrate are bonded so as to face each other. Next, the first field-effect transistor and the second field-effect transistor are electrically connected to each other. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012216776(A) 申请公布日期 2012.11.08
申请号 JP20120025310 申请日期 2012.02.08
申请人 SONY CORP 发明人 YOKOYAMA KOJI
分类号 H01L21/8238;H01L21/28;H01L21/336;H01L21/338;H01L21/768;H01L23/532;H01L27/00;H01L27/08;H01L27/092;H01L29/423;H01L29/49;H01L29/778;H01L29/78;H01L29/786;H01L29/812 主分类号 H01L21/8238
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