发明名称 METHODS FOR FABRICATING HIGH-DENSITY INTEGRATED CIRCUIT DEVICES
摘要 An integrated circuit device having a plurality of lines is described in which the widths of the lines, and the spacing between adjacent lines, vary within a small range which is independent of variations due to photolithographic processes, or other patterning processes, involved in manufacturing the device. A sequential sidewall spacer formation process is described for forming an etch mask for the lines, which results in first and second sets of sidewall spacers arranged in an alternating fashion. As a result of this sequential sidewall spacer process, the variation in the widths of the lines across the plurality of lines, and the spacing between adjacent lines, depends on the variations in the dimensions of the sidewall spacers. These variations are independent of, and can be controlled over a distribution much less than, the variation in the size of the intermediate mask element caused by the patterning process.
申请公布号 WO2012151209(A2) 申请公布日期 2012.11.08
申请号 WO2012US35997 申请日期 2012.05.01
申请人 SYNOPSYS, INC.;MOROZ, VICTOR;LIN, XI-WEI 发明人 MOROZ, VICTOR;LIN, XI-WEI
分类号 H01L21/027 主分类号 H01L21/027
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