发明名称 |
METHOD FOR FABRICATING HIGH-K DIELECTRIC LAYER |
摘要 |
A method for fabricating high-k dielectric layer is disclosed. The method includes the steps of: providing a substrate; and forming a plurality of high-k dielectric layers by using a plurality of reacting gases to perform a plurality of process stages on the surface of the substrate, wherein at least one of the reacting gases comprises different flow rate in the fabrication stages.
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申请公布号 |
US2012282783(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201113099363 |
申请日期 |
2011.05.03 |
申请人 |
CHANG JUI-CHEN;CHIANG CHEN-KUO;LIN CHIN-FU;LIU CHIH-CHIEN |
发明人 |
CHANG JUI-CHEN;CHIANG CHEN-KUO;LIN CHIN-FU;LIU CHIH-CHIEN |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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