发明名称 METHOD FOR FABRICATING HIGH-K DIELECTRIC LAYER
摘要 A method for fabricating high-k dielectric layer is disclosed. The method includes the steps of: providing a substrate; and forming a plurality of high-k dielectric layers by using a plurality of reacting gases to perform a plurality of process stages on the surface of the substrate, wherein at least one of the reacting gases comprises different flow rate in the fabrication stages.
申请公布号 US2012282783(A1) 申请公布日期 2012.11.08
申请号 US201113099363 申请日期 2011.05.03
申请人 CHANG JUI-CHEN;CHIANG CHEN-KUO;LIN CHIN-FU;LIU CHIH-CHIEN 发明人 CHANG JUI-CHEN;CHIANG CHEN-KUO;LIN CHIN-FU;LIU CHIH-CHIEN
分类号 H01L21/469 主分类号 H01L21/469
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