发明名称 |
MULTIPLYING PATTERN DENSITY BY SINGLE SIDEWALL IMAGING TRANSFER |
摘要 |
A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed. |
申请公布号 |
US2012280283(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201213552205 |
申请日期 |
2012.07.18 |
申请人 |
CHENG KANGGUO;DORIS BRUCE B.;ZHANG YING;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;ZHANG YING |
分类号 |
H01L27/085 |
主分类号 |
H01L27/085 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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