| 摘要 |
PURPOSE: A semiconductor device is provided to secure high speed operation and reduce power consumption. CONSTITUTION: A semiconductor film(103n) has silicon having crystallization. A gate insulating film(104n) is formed on the semiconductor film. A gate electrode(105n) is arranged on the area overlapped with the semiconductor film. A conductive film(161,162) is connected to the semiconductor film and operated as a source electrode or a drain electrode. The semiconductor film includes a first area(108) serving as a channel formation area and second areas(109,110) serving as a source and a drain. A p-channel transistor(102p) includes a semiconductor film(103p), a gate insulating film(104p) and a gate electrode(105p).
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