Vertical Structure Light Emitting Diode and Method for Manufacturing the Same

摘要

PURPOSE: A vertical light emitting diode and a manufacturing method thereof are provided to improve efficiency of a package process by forming a thickness of a street line to be less than that of a semiconductor structure region. CONSTITUTION: An n-type gallium nitride film(102) is formed on the lower side of an n-type electrode(101). An active layer(103) is formed on the lower side of the n-type gallium nitride film. A p-type gallium nitride film(104) is formed on the lower side of the active layer. A p-type electrode is formed on the lower side of the p-type gallium nitride film. A metal layer is formed on the lower side of the p-type electrode.