发明名称 |
Process for producing semiconductor device and apparatus therefor |
摘要 |
A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.
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申请公布号 |
US8302843(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20090412970 |
申请日期 |
2009.03.27 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
MATSUI HIROYUKI;MAKINO YUTAKA;AKUTAGAWA YOSHITO |
分类号 |
B23K31/02 |
主分类号 |
B23K31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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