发明名称 Process for producing semiconductor device and apparatus therefor
摘要 A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.
申请公布号 US8302843(B2) 申请公布日期 2012.11.06
申请号 US20090412970 申请日期 2009.03.27
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 MATSUI HIROYUKI;MAKINO YUTAKA;AKUTAGAWA YOSHITO
分类号 B23K31/02 主分类号 B23K31/02
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