Actuating transistor including multiple reentrant profiles

摘要

A method of actuating a semiconductor device includes providing a transistor. The transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer includes a reentrant profile. The second electrically conductive material layer also overhangs the first electrically conductive material layer. An electrically insulating material layer is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. A semiconductor material layer conforms to and is in contact with the electrically insulating material layer. A third electrically conductive material layer is nonconformally positioned over and in contact with a first portion of the semiconductor material layer. A fourth electrically conductive material layer is nonconformally positioned over and in contact with a second portion of the semiconductor material layer. A voltage is applied between the third electrically conductive material layer and the fourth electrically conductive material layer. A voltage is applied to the first electrically conductive material layer to electrically connect the third electrically conductive material layer and the fourth electrically conductive material layer.