发明名称 |
Thin film transistor |
摘要 |
A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.
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申请公布号 |
US8304775(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20100716002 |
申请日期 |
2010.03.02 |
申请人 |
MIYAIRI HIDEKAZU;WATABE TAKEYOSHI;SHIMAZU TAKASHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI HIDEKAZU;WATABE TAKEYOSHI;SHIMAZU TAKASHI |
分类号 |
H01L29/04;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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