发明名称 |
Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition |
摘要 |
A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.
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申请公布号 |
US8304336(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20090605162 |
申请日期 |
2009.10.23 |
申请人 |
JEONG CHAEHWAN;LEE JONG HO;KIM HO-SUNG;BOO SEONGJAE;KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY |
发明人 |
JEONG CHAEHWAN;LEE JONG HO;KIM HO-SUNG;BOO SEONGJAE |
分类号 |
H01L21/44;H01L31/075;H01L31/077 |
主分类号 |
H01L21/44 |
代理机构 |
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