发明名称 Algainn-based lasers produced using etched facet technology
摘要 A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
申请公布号 US8306086(B2) 申请公布日期 2012.11.06
申请号 US201213397595 申请日期 2012.02.15
申请人 BEHFAR ALEX A.;SCHREMER ALFRED T.;STAGARESCU CRISTIAN B.;VAINATEYA;BINOPTICS CORPORATION 发明人 BEHFAR ALEX A.;SCHREMER ALFRED T.;STAGARESCU CRISTIAN B.;VAINATEYA
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项
地址