发明名称 |
Deposit removing method and substrate processing method |
摘要 |
A deposit removing method that can reliably remove deposit produced in plasma processing using plasma produced from a process gas containing methane gas and oxygen gas. In a chamber in which an electrode to which radio frequency electrical power is supplied is disposed, plasma processing is carried out on a substrate using the plasma produced from the process gas containing methane gas and oxygen gas, and then a cleaning step is carried out in which plasma is produced from a mixed gas containing fluorinated compound gas containing hydrogen in the chamber. |
申请公布号 |
US8303719(B2) |
申请公布日期 |
2012.11.06 |
申请号 |
US20090389057 |
申请日期 |
2009.02.19 |
申请人 |
LEE SUNGTAE;NAKAGAWA YUSUKE;YASHIRO JUN;TOKYO ELECTRON LIMITED |
发明人 |
LEE SUNGTAE;NAKAGAWA YUSUKE;YASHIRO JUN |
分类号 |
B08B9/08;B08B5/00 |
主分类号 |
B08B9/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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