| 摘要 |
PURPOSE: A consecutive mass production method of semiconductor nano-wires in which the length is controlled is provided to manufacture high purity nano-wires which do not include catalyst materials. CONSTITUTION: A consecutive mass production method of semiconductor nano-wires comprises the following steps: forming a net shaped metal film(200) in which a plurality of penetrating cavities is formed at the upper part of a semiconductor substrate(100); manufacturing a plurality of semiconductor substrate nano-wires(300) in which one end is adhered to the semiconductor substrate by wet etching the semiconductor substrate using the metal film as a catalyst; and applying ultrasound on the semiconductor substrate in which the semiconductor nano-wire is formed and cutting the semiconductor nano-wire from the semiconductor substrate in order to obtain the semi-conductor substrate and independent semiconductor nano-wires(400). After the third step, the partial etching step and the cutting step are repeatedly performed by using the semiconductor substrate.
|
