| 摘要 |
<p>PURPOSE: A method for manufacturing a metal pattern of a semiconductor device is provided to easily form a fine metal pattern by simultaneously securing the linewidth of the metal pattern and preventing unetch. CONSTITUTION: A metal layer(12) is formed on the upper side of a substrate(11). A hard mask layer is formed on the upper side of the metal layer. A sacrificial pattern is formed on the hard mask layer. A spacer pattern is formed on the sidewall of the sacrificial pattern. A hard mask pattern(13A,14A) is formed by etching the hard mask layer using the spacer pattern as an etching barrier. An etching protection layer(22) is formed on the upper side and the sidewall of the hard mask pattern.</p> |
