| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SOI DRAM. <P>SOLUTION: A DRAM comprises: a MIS field effect transistor in which a first insulation film 2 is provided on a semiconductor substrate 1, a second insulation film 3 is selectively provided on the first insulation film 2, semiconductor layers (6, 7, 8) are selectively provided to extend from on the second insulation film 3 to on a region on which the second insulation film 3 is not provided, an enclosing gate electrode 15 is selectively provided on the first insulation film 2 around a whole periphery of a part 7 of the semiconductor layers via a gate insulation film 14, source-drain regions (10, 11, 12, 13) self-aligned with the gate electrode 15 are provided on a part 8 of the semiconductor layers having a hole immediately below and on a part 6 of the remaining semiconductor layers; and a stacked capacitor in which a charge storage electrode 17 is provided on the source region 11, and on a lateral face and a top face of the charge storage electrode 17, a cell plate electrode (counter electrode) 20 is provided via a capacitor insulation film 19. <P>COPYRIGHT: (C)2013,JPO&INPIT |
