| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can reduce a junction leakage current and improve reliability of a transistor. <P>SOLUTION: A semiconductor device comprises a hydrogen-containing insulation film 62 covering a gate insulation film 21 arranged above a gate electrode 61 and a top face 61a of the gate electrode 61, and a fluorine-containing insulation film 63 embedding an upper part 17B of a gate electrode groove 17. Surfaces of first and second impurity diffusion regions 65, 66 contacting the gate insulation film 21 have an Si-H bond obtained by bonding of silicon contained in the semiconductor substrate 13 and hydrogen contained in the hydrogen-containing insulation film 62, and an Si-F bond obtained by bonding of silicon contained in the semiconductor substrate 13 and fluorine contained in the fluorine-containing insulation film 63. <P>COPYRIGHT: (C)2013,JPO&INPIT |
