发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed. |
申请公布号 |
US2012276694(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201213453118 |
申请日期 |
2012.04.23 |
申请人 |
KOEZUKA JUNICHI;YAMADE NAOTO;SATO YUHEI;OKAZAKI YUTAKA;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOEZUKA JUNICHI;YAMADE NAOTO;SATO YUHEI;OKAZAKI YUTAKA;YAMAZAKI SHUNPEI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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