METHOD FOR MANUFACTURING PHOTOMASK, METHOD FOR TRANSFERRING PATTERN, AND METHOD FOR MANUFACTURING DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To carry out patterning without requiring an additional investment even when a line-and-space pattern with a fine pitch is formed on an object to be processed.

SOLUTION: A side etching width α is determined based on etching conditions upon etching an object to be processed; a line width RLand a space width RSof a resist pattern are set based on the respective line width WLand space width WSof a film pattern and on the side etching width α; and exposure conditions for exposure and a line width MLand a space width MSof a transfer pattern are determined based on a resist pattern having the determined line width RLand space width RS. The line width MLof the transfer pattern is different from the determined line width RL; and the space width MSof the transfer pattern is different from the determined space width RS.

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