WIRING DEFECT INSPECTING METHOD, WIRING DEFECT INSPECTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

In this wiring defect inspecting method, a resistance value of a short-circuited path of a semiconductor substrate is obtained, a voltage specified on the basis of the obtained resistance value is applied to the semiconductor substrate having the defect portion so as to have the defect portion generate heat and increase temperature, and the semiconductor substrate, in which the defect portion has an increased temperature by generating heat, is photographed using an infrared camera.