| 摘要 |
<p>Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a substrate (11) and electrode portions (15, 16) and electrode portions (17, 18) which act as electrodes for the multiple semiconductor layers (12-14), an SiN film (31) having a thickness of 35 nm or more and comprising silicon nitride covers the surrounds of the multiple semiconductor layers (12-14), the electrode portions (15, 16) and the electrode portions (17, 18) and an SiO film (32) having a higher thickness than that of the SiN film (31) and comprising silicon oxide covers the surround of the SiN film (31), as protective films for the semiconductor light-emitting element.</p> |
