发明名称 |
FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF |
摘要 |
By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.
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申请公布号 |
US2012273939(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201113174794 |
申请日期 |
2011.07.01 |
申请人 |
DAI MING-JI;CHIEN HENG-CHIEH;HSIEH MING-CHE;HUNG JUI-FENG;TAIN RA-MIN;LAU JOHN H.;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
DAI MING-JI;CHIEN HENG-CHIEH;HSIEH MING-CHE;HUNG JUI-FENG;TAIN RA-MIN;LAU JOHN H. |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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地址 |
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