发明名称 FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF
摘要 By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.
申请公布号 US2012273939(A1) 申请公布日期 2012.11.01
申请号 US201113174794 申请日期 2011.07.01
申请人 DAI MING-JI;CHIEN HENG-CHIEH;HSIEH MING-CHE;HUNG JUI-FENG;TAIN RA-MIN;LAU JOHN H.;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 DAI MING-JI;CHIEN HENG-CHIEH;HSIEH MING-CHE;HUNG JUI-FENG;TAIN RA-MIN;LAU JOHN H.
分类号 H01L23/48 主分类号 H01L23/48
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