发明名称 METHOD FOR FORMING A NANODIAMOND-IMPREGNATED DIELECTRIC LAYER FOR A HIGHLY HEAT DISSIPATING METAL SUBSTRATE
摘要 <p>The present invention relates to a method for forming a dielectric layer having an improved heat-dissipating performance and dielectric performance by impregnating nanodiamond into the dielectric layer of an existing metal heat-dissipating substrate in order to improve the heat-dissipating ability of the dielectric layer. More specifically, an anodisation method is introduced so as to form an anodic film as a dielectric layer on at least one surface of an aluminium or aluminium alloy or a magnesium or magnesium alloy plate material provided as a metal heat-dissipating plate, and then an acid or an alkali is used so as to expand voids in the anodic film, and conditioning is carried out in order to ensure that the insides of the expanded voids are hydrophilic. Also, a method is provided for forming a nanodiamond-impregnated dielectric layer for a highly heat dissipating metal substrate, the method comprising the step of impregnating the expanded voids with nanodiamond.</p>
申请公布号 WO2012148020(A1) 申请公布日期 2012.11.01
申请号 WO2011KR03177 申请日期 2011.04.28
申请人 INNECTRON CO., LTD.;KIM, DONG-KYU;KIM, HYUN-SU;HWANG, YOUNG-CHAN;SON, JAE-GU 发明人 KIM, DONG-KYU;KIM, HYUN-SU;HWANG, YOUNG-CHAN;SON, JAE-GU
分类号 H01L33/64;H01L23/34 主分类号 H01L33/64
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