| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance a mechanical strength of a through-hole periphery, while improving the positional accuracy of a through-hole. <P>SOLUTION: In the method of forming the through-hole, in the first surface of silicon substrate 101, a first high impurity region 102a that is higher than the silicon substrate 101 by the impurity concentration, is formed surroundings of the area where the through-hole is formed, and in the depth direction of silicon substrate 101, a second high impurity region 102b that is higher than the first impurity region 102a in the impurity concentration is formed to a position adjacent to the first impurity region 102a. Then, an etching stop layer 103 is formed on the first surface, an etch mask layer 104 that has the opening is formed on the second surface opposing to the first surface of silicon substrate 101 is formed, and through the opening, a process to perform etching of the silicon substrate 101 is contained at least until the etching stop layer 103 is exposed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
