DOHERTY POWER AMPLIFIER DEVICE AND POWER AMPLIFICATION METHOD THEREFOR
摘要
<p>Disclosed are a Doherty power amplifier device and a power amplification method therefor. The device comprises an auxiliary power amplifier device and a main power amplifier device. The auxiliary power amplifier device is configured to employ a laterally diffused metal oxide semiconductor (LDMOS) component for signal power amplification. The main power amplifier device is configured to employ a high-voltage heterojunction bipolar transistor (HVHBT) component for signal power amplification. Compared with existing Doherty power amplification having employed LDMOS for both the main power amplification and the auxiliary power amplification, the present solution improves the efficiency of the main power amplification in Doherty power amplification, thus improving greatly the overall power amplification efficiency of Doherty power amplification.</p>
