| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a single crystal of a gallium nitride-based semiconductor which is large-sized and good in crystallinity. <P>SOLUTION: A seed crystal 10 is formed of a mixed crystal containing Ga and N, and is used for crystal growth of a gallium nitride-based semiconductor, wherein the seed crystal 10 contains a +c polar region 20 and a -c polar region 30 in the visual field of observation of the surface of the seed crystal 10 from one direction of two directions parallel with the c axis of the seed crystal 10. The +c polar region 20 is a region positioned on a surface of the seed crystal, and containing at least one plane of (0001), äh-h0l} and ähh-2hl} wherein h and l are a natural number, and the -c polar region 30 is a region positioned on a surface of the seed crystal, and containing at least one plane of (000-1), äa-a0-c} and äaa-2a-c} wherein a and c are a natural number. <P>COPYRIGHT: (C)2013,JPO&INPIT |
