发明名称 POWER AMPLIFIER DEVICE AND POWER AMPLIFIER CIRCUIT
摘要 <p>Disclosed are a power amplifier device and a power amplifier circuit. The power amplifier circuit employs a Doherty circuit structure. A final-level power amplifier circuit employs a high-voltage heterojunction bipolar transistor (HVHBT) amplifier tube to implement a main (carrier) amplifier and an auxiliary (peak) amplifier of the Doherty circuit structure. The power amplifier device and the power amplifier circuit improve the efficiency of power amplification.</p>
申请公布号 WO2012146014(A1) 申请公布日期 2012.11.01
申请号 WO2011CN81438 申请日期 2011.10.27
申请人 ZTE CORPORATION;CHEN, HUAZHANG;CUI, XIAOJUN;LIU, JIANLI;AN, JINYUAN 发明人 CHEN, HUAZHANG;CUI, XIAOJUN;LIU, JIANLI;AN, JINYUAN
分类号 H03F1/07 主分类号 H03F1/07
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