NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR

摘要

A nanodevice comprising: a substrate (10); a mask layer (40) located on the substrate, the mask layer having at least one opening (402); and a nanowall (52) formed on the substrate through the opening, the nanowall extending through the opening in a direction substantially perpendicular to a surface of the substrate, wherein the substrate comprises a first substrate portion (301) contacting the nanowall; and a second substrate portion (303) surrounded by the first substrate portion, and wherein surface energy of the first substrate portion is larger than that of the second substrate portion, and a difference in the surface energy between the first and second substrate portions is about 0.1J/m 2 to about 5J/m 2 .