发明名称 |
DUAL WORK FUNCTION GATE STRUCTURES |
摘要 |
A semiconductor chip having a transistor is described. The transistor having a gate electrode disposed over a gate dielectric. The gate electrode comprised of first gate material disposed on the gate dielectric and second gate material disposed on the gate dielectric. The first gate material being different than the second gate material. The second gate material also located at a source region or drain region of said gate electrode. |
申请公布号 |
EP2517244(A2) |
申请公布日期 |
2012.10.31 |
申请号 |
EP20100843438 |
申请日期 |
2010.12.02 |
申请人 |
INTEL CORPORATION |
发明人 |
HAFEZ, WALID M.;RAHMAN, ANISUR |
分类号 |
H01L27/092;H01L29/06;H01L29/40;H01L29/49;H01L29/66;H01L29/78;H01L29/82 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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