| 摘要 |
Aspects of the invention provide for methods of forming a deep trench capacitor structure. In one embodiment, aspects of the invention include a method of forming a deep trench capacitor structure, including: forming a deep trench within a semiconductor substrate; depositing a first liner within the deep trench; filling a lower portion of the deep trench with a filler material; depositing a second liner within an upper portion of the deep trench; removing the filler material, such that the lower portion of the deep trench includes only the first liner and the upper portion of the deep trench includes the first liner and the second liner; forming a high doped region around the lower portion of the deep trench; and removing the first liner within the lower portion of the deep trench and the second liner within the upper portion of the deep trench. |
